Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ431AEP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 200V 9.4A PPAK SO-8
Product Attributes：
Part Number: SQJ431AEP-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ431AEP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 48VWM 77.4VC DO214AC
DIODE SCHOTTKY 80V 4A TO277A
MOSFET N-CH 100V 110A TO263
FIXED IND 2.7NH 800MA 80MOHM SMD
IR RECEIVER - PANHEAD PACKAGE -
Product Specifications：
MfrPart.: SQJ431AEP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 200V 9.4A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 9.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 305mOhm @ 3.8A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 85 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3700 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8 DualSQJ431AEP-T1_GE3 | Vishay | NHE Electronics
SQJ431AEP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
