Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ443EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 40V 40A PPAK SO-8
Product Attributes:
Part Number: SQJ443EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 40V 40A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ443EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 15A TO220FP
TVS DIODE 7VWM 12VC DO204AC
THERMISTOR NTC 47KOHM 4090K BEAD
DIODE ZENER 36V 225MW SOT23-3
TVS DIODE 15VWM 24.4VC DO214AA
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications:
MfrPart.: SQJ443EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 40V 40A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 29mOhm @ 18A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 57 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2030 pF @ 20 VFETFeature: -PowerDissipation(Max): 83W (Tc)OperatingTemperature: -55°C ~ 175°C (TA)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ443EP-T1_GE3 | Vishay | NHE Electronics
SQJ443EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.