Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJA92EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 57A PPAK SO-8
Product Attributes:
Part Number: SQJA92EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 57A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJA92EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 68V 225MW SOT23-3
THERMISTOR NTC 50KOHM 3964K 1206
TVS DIODE 10.5VWM 19VC 1.5KE
FIXED IND 8.2UH 3A 28 MOHM TH
DIODE GEN PURP 25V 150MA SOD80
FIXED IND 10UH 3A 97.71 MOHM SMD
Product Specifications:
MfrPart.: SQJA92EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 57A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 57A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 9.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 45 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2650 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJA92EP-T1_GE3 | Vishay | NHE Electronics
SQJA92EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.