Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJQ131EL-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, AUTOMOTIVE P-CHANNEL 30 V (D-S)
Product Attributes：
Part Number: SQJQ131EL-T1_GE3
Manufacturer: Vishay
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJQ131EL-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
POT 1K OHM 3W CERMET LINEAR
DIODE SCHOTTKY 30V 1A DO220AA
DIODE SCHOTTKY 150V 10A TO262
FIXED IND 10UH 106MA 4 OHM TH
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 5.1V 500MW SOD80
Product Specifications：
MfrPart.: SQJQ131EL-T1_GE3Mfr: Vishay SiliconixDescription: AUTOMOTIVE P-CHANNEL 30 V (D-S)Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 280A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.4mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 731 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 33050 pF @ 15 VFETFeature: -PowerDissipation(Max): 600W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SQJQ131EL-T1_GE3 | Vishay | NHE Electronics
SQJQ131EL-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
