Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJQ410EL-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 135A PPAK 8 X 8
Product Attributes：
Part Number: SQJQ410EL-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 135A PPAK 8 X 8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJQ410EL-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 18VWM 29.2VC DO214AC
DIODE GEN PURP 800V 60A TO247AC
DIODE GEN PURP 600V 8A DPAK
TVS DIODE 51VWM 82.4VC DO204AC
BRIDGE RECT 1PHASE 600V 3A GBL
IC OFFLINE SWITCH FLYBACK 8SOIC
Product Specifications：
MfrPart.: SQJQ410EL-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 135A PPAK 8 X 8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 135A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.4mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 150 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 7350 pF @ 25 VFETFeature: -PowerDissipation(Max): 136W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SQJQ410EL-T1_GE3 | Vishay | NHE Electronics
SQJQ410EL-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
