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SQM120N10-3M8_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 120A TO263
Product Attributes：
Part Number: SQM120N10-3M8_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 120A TO263
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQM120N10-3M8_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQM120N10-3M8_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 120A TO263Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 3.8mOhm @ 20A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 190 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 7230 pF @ 25 VFETFeature: -PowerDissipation(Max): 375W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-263 (D²Pak)SQM120N10-3M8_GE3 | Vishay | NHE Electronics
SQM120N10-3M8_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
