Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQS486CENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, AUTOMOTIVE N-CHANNEL 40 V (D-S)
Product Attributes:
Part Number: SQS486CENW-T1_GE3
Manufacturer: Vishay
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS486CENW-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 5.6UH 185MA 1.8 OHM TH
TVS DIODE 40VWM 71.4VC DO214AB
TVS DIODE 40VWM 64.5VC DO214AA
DIODE GEN PURP 1.2KV 500MA DO204
DIODE SCHOTTKY 60V 1A DO219AB
EMITTER IR 940NM 100MA SMD
Product Specifications:
MfrPart.: SQS486CENW-T1_GE3Mfr: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 40 V (D-S)Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 18A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.1mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 53 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2950 pF @ 25 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8WSQS486CENW-T1_GE3 | Vishay | NHE Electronics
SQS486CENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.