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SQS660CENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, AUTOMOTIVE N-CHANNEL 60 V (D-S)
Product Attributes：
Part Number: SQS660CENW-T1_GE3
Manufacturer: Vishay
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS660CENW-T1_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQS660CENW-T1_GE3Mfr: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 60 V (D-S)Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 18A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 11.2mOhm @ 7A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 26 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1950 pF @ 25 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8WSQS660CENW-T1_GE3 | Vishay | NHE Electronics
SQS660CENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
