Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQS840CENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 12A PPAK 1212-8W
Product Attributes：
Part Number: SQS840CENW-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 12A PPAK 1212-8W
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS840CENW-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 16V 1W DO214AC
FIXED IND 18UH 255MA 1.95 OHM TH
TVS DIODE 36.8VWM 59.3VC DO214AC
FIXED IND 4.7UH 10A 15 MOHM SMD
DIODE ZENER 3.6V 410MW SOD123
Product Specifications：
MfrPart.: SQS840CENW-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 12A PPAK 1212-8WProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 20mOhm @ 7.5A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 22.5 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1031 pF @ 20 VFETFeature: -PowerDissipation(Max): 33W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8WSQS840CENW-T1_GE3 | Vishay | NHE Electronics
SQS840CENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
