Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQSA80ENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 18A PPAK1212-8
Product Attributes：
Part Number: SQSA80ENW-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 18A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQSA80ENW-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 47UH 2.6A 120 MOHM SMD
TVS DIODE 43.6VWM 70.1VC DO214AA
MOSFET P-CH 200V 6.5A D2PAK
IGBT MOD 1200V 750A INT-A-PAK
DIODE ZENER 120V 1.25W DO214AC
Product Specifications：
MfrPart.: SQSA80ENW-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 18A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 18A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 21mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 21 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1358 pF @ 40 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SQSA80ENW-T1_GE3 | Vishay | NHE Electronics
SQSA80ENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
