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SQV120N10-3M8_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 120A TO262-3
Product Attributes：
Part Number: SQV120N10-3M8_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 120A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQV120N10-3M8_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQV120N10-3M8_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 120A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 3.8mOhm @ 20A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 190 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 7230 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: -SQV120N10-3M8_GE3 | Vishay | NHE Electronics
SQV120N10-3M8_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
