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SUD35N10-26P-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 35A TO252
Product Attributes：
Part Number: SUD35N10-26P-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 35A TO252
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SUD35N10-26P-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SUD35N10-26P-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 35A TO252Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7V, 10VRdsOn(Max)@IdVgs: 26mOhm @ 12A, 10VVgs(th)(Max)@Id: 4.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 47 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2000 pF @ 12 VFETFeature: -PowerDissipation(Max): 8.3W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASUD35N10-26P-GE3 | Vishay | NHE Electronics
SUD35N10-26P-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
